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Beijing Silk Road Enterprise Management Services Co.,LTD
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High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

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High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

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MOQ : 1500

Payment Terms : T/T

Supply Ability : 3000000PCS/month

Delivery Time : 5-15days

Packaging Details : Tube

Brand Name : OTOMO

Model Number : HBR20200

Place of Origin : China

Package : TO-220C TO-220HF TO-263

IF(AV) : 20A

VRRM : 200V

Tj : 175℃

VF(max) : 0.75V

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Suitable for high frequency switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263

APPLICATIONS

 High frequency switch power supply  Free wheeling diodes, polarity protection applications

FEATURES

Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection,High reliability RoHS product


Product Tags:

High Frequency Mos Field Effect Transistor

      

Mos Field Effect Transistor 20A

      

200V Mos Field Effect Transistor

      
Quality High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application for sale

High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application Images

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